Title :
Performance improvement for Metal/Al2O3/HfO2/SiO2/Si structure nonvolatile flash memory by fluorine plasma treatment
Author :
Chen-Jie Wang ; Zong-Liang Huo ; Ming Liu
Author_Institution :
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, the effects of fluorine plasma treatment on Metal/Al2O3/HfO2/SiO2/Si (MAHOS) memory structure have been investigated. With a pre-fluorine plasma treatment, MAHOS device shows enhanced program/erase (P/E) efficiency and improved room temperature/high temperature data retention characteristic. The improvement of memory performance is primarily owing to the annihilation of shallow traps originated from oxygen vacancies and interface states near HfO-SiO interface by fluorine passivation which are confirmed by X-ray photoelectron spectroscopy (XPS) depth profile analysis and electrical characteristics.
Keywords :
X-ray photoelectron spectra; aluminium compounds; flash memories; hafnium compounds; interface states; passivation; random-access storage; silicon; silicon compounds; vacancies (crystal); Al2O3-HfO2-SiO2-Si; HfO-SiO interface; MAHOS device; MAHOS memory structure; X-ray photoelectron spectroscopy; XPS depth profile analysis; enhanced program/erase efficiency; fluorine passivation; fluorine plasma treatment; high temperature data retention characteristic; interface states; nonvolatile flash memory; oxygen vacancies; shallow trap annihilation; temperature 293 K to 298 K; Hafnium compounds; Interface states; Plasma temperature; Silicon; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467578
