Title :
A compact Ka-band power amplifier using finite-ground coplanar waveguide design
Author :
Yang, Tsung-Yu ; Pai, Li-Chih ; Chiou, Hwann-Kaeo
Author_Institution :
Dept. of Electr. Eng., National Central Univ., Jhongli, Taiwan
Abstract :
A compact 0.15μm InGaAs pHEMT power amplifier using finite-ground coplanar waveguide (FGCPW) design for Ka-band applications is presented. An optimum ratio between signal and ground width is demonstrated in this design. The proposed two stages FGCPW power amplifier delivers a 14.5dB linear power gain at 31GHz with 19.3% maximum power-added efficiency (Max PAE). Furthermore, the chip size is very compact less than 2 mm2. Compared to previously reported Ka-band amplifiers, the results are superior to those using the microstrip technique on MMIC power amplifier designs.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; coplanar waveguides; gallium arsenide; indium compounds; power HEMT; power integrated circuits; 0.15 micron; 14.5 dB; 31 GHz; FGCPW design; InGaAs; InGaAs pHEMT power amplifier; Ka-band amplifiers; MMIC power amplifier design; finite-ground coplanar waveguide design; linear power gain; maximum power-added efficiency; microstrip technique; Coplanar transmission lines; Coplanar waveguides; Frequency; High power amplifiers; MMICs; Microstrip; PHEMTs; Power amplifiers; Power transmission lines; Radiofrequency amplifiers; Finite-ground coplanar waveguide; Ka-band; Power amplifier (PA); pHEMT;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606969
