Title :
Fabrication characteristics of 1.2kV SiC junction barrier schottky rectifiers with etched implant junction termination extension
Author :
Xiao-Chuan Deng ; Fei Yang ; He Sun ; Cheng-Yuan Rao ; Yong Wang ; Hao Wu ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
An etched implanted junction termination extension (JTE) is presented for high-voltage 4H-SiC JBS rectifiers. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. Experimental and simulation results show that the JBS rectifier with etched JTE can improve the blocking performance compared to a conventional JTE structure and decrease the sensitivity of any possible variation in processing condition. The fabricated SiC JBS rectifier showed the forward on-state voltage characteristic is 1.3V at room temperature and the blocking voltage of 1.2kV.
Keywords :
Schottky barriers; etching; rectifiers; silicon compounds; wide band gap semiconductors; JTE concentration range; SiC; SiC junction barrier Schottky rectifiers; blocking performance; etched implanted junction termination extension; forward on-state voltage characteristic; high-voltage 4H-SiC JBS rectifiers; multiple etching; temperature 293 K to 298 K; voltage 1.2 kV; voltage 1.3 V; Electric breakdown; Electric fields; Implants; Junctions; Rectifiers; Silicon carbide; Thermal conductivity;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467596
