Investigation on zinc oxide photosensitive resistance

In this experiment, zinc acetate dihydrate is as the raw material, ethanolamine is as the active agent, ethylene glycol monomethyl ether is as solvent, aluminum nitrate and manganese acetate is as a dopant, ZnO thin films were deposited on silicon (100) substrates by spin-coating using sol-gel synthesis. And explore the effects of Light of different intensity and different concentrations of p-type and n-type impurities on ZnO films of conductive properties[1]. The experimental results indicate that the intrinsic zinc oxide is a two-material, with the light increased resistance at first decreases and then increases, in the final leveling off. Dopant manganese and aluminum to zinc oxide thin films significantly reduced the resistance, while resistance decreases with increased illumination and doping ratio increases resistance also decreased.