Title :
A 12V complementary RF LDMOS technology developed on a 0.18μm CMOS platform
Author :
Moscatelli, A. ; Contiero, C. ; Galbiati, P. ; Raffaglio, C.
Author_Institution :
STMicroelectronics, Italy
Abstract :
Complementary RF LDMOS devices have been successfully integrated for the first time in a 0.18 μm CMOS platform. A 12 V voltage capability and cut off frequency of 18 GHz and 12 GHz, respectively, for N-channel and P-channel devices have been obtained. In this paper, the complementary RF LDMOS architecture is presented together with device performances.
Keywords :
power MOSFET; 0.18 micron; 12 GHz; 12 V; 18 GHz; CMOS process; N-channel devices; P-channel devices; complementary RF LDMOS technology; Power MOSFETs;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332850
