Title :
Major influence of Ti/TiN and TTN metal barrier layer deposition on electro-migration resistivity
Author :
Wei Xu ; Liao, Shengcai ; Ling Jiang ; Jian Yang ; Chao Yu
Author_Institution :
Qualit.y Eng., Shanghai Hua Hong NEC Electron. Co., Ltd., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The article studies electro-migration lifetime of two sputter ways - Ti/TiN and TTN for interconnection system with via to metal ARC through process, which shows an obviously better lifetime performance of Ti/TiN than that of TTN. By applying PFA method, a different failure position and smooth level is observed at barrier-dielectric interface which indicate a more defective initial interface at the very beginning of the deposition for TTN than for Ti/TiN. For further discussion, an initial resistance of via chain structure and MBIST test data is also collected.
Keywords :
built-in self test; diffusion barriers; electromigration; failure analysis; integrated circuit interconnections; life testing; semiconductor device metallisation; sputter deposition; vias; MBIST test data; PFA method; barrier-dielectric interface; defective initial interface; electromigration lifetime; electromigration resistivity; failure position; initial via chain structure resistance; interconnection system; lifetime performance; metal ARC; metal barrier layer deposition; smooth level; sputter deposition; Compounds; Conductivity; Current density; Nitrogen; Resistance; Tin;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467650
