• DocumentCode
    3416645
  • Title

    Oxide based memristive devices

  • Author

    Yang, Jie J. ; Zhang, Min-Xia ; Feng Miao ; Strachan, John Paul ; Torrezan, A.C. ; Pickett, Matthew D. ; Wei Yi ; Byung Joon Choi ; Nickel, J.H. ; Medeiros-Ribeiro, G. ; Williams, R.S.

  • Author_Institution
    Hewlett-Packard Co., Palo Alto, CA, USA
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Memristive devices with fast speed, low-energy, high endurance and small footprint have attracted significant attention recently. In this article, we first briefly introduce the switching mechanisms and then discuss possible applications with these devices, including memory, logic and neuromorphic computing. Finally, the promises and challenges of these devices are discussed, together with some possible solutions.
  • Keywords
    logic circuits; memristors; random-access storage; fast speed; high endurance; logic computing; low-energy; memory computing; neuromorphic computing; oxide based memristive devices; small footprint; switching mechanisms; CMOS integrated circuits; Electrodes; Materials; Memristors; Resistance; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467661
  • Filename
    6467661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3416645