DocumentCode :
3416651
Title :
Comparing the robustness of fault-tolerant enhancements when applied to lookup tables and random logic for nano-computing
Author :
Dotan, Yocheved ; Chen, Orgad ; Katz, Gil
Author_Institution :
Dept. of Electrical and Computer Eng., Ruppin Academic Center, Ruppin, Israel
fYear :
2010
fDate :
7-9 July 2010
Firstpage :
107
Lastpage :
114
Abstract :
New challenges are arising in the design of computer systems with the emergence of new nanometer-scale devices and sophisticated fabrication techniques. Unfortunately, the yield, reliability, and drive characteristics of these new deep-submicron and nano-scale devices are different from the corresponding characteristics of conventional CMOS devices. It is expected that future circuit technologies will have substantially higher defect densities and dynamic fault rates. There is no consensus yet on which technology will be selected and which of the traditional logic designs has an advantage for fault tolerant nano-computing. In this work, we compare the robustness of several fault-tolerant approaches applied to lookup table design and random logic design for a wide range of fault rates. Implementing fault tolerance in a circuit using TMR and Hamming and Hsiao error correcting codes with a lookup table design style gives better fault coverage compared with a random gate design style. TMR is the best fault-tolerance technique when implemented using the lookup table design. However, TMR was the worst technique for fault rates greater than 0.5% when implemented using random logic design and no gate level is fault free.
Keywords :
CMOS logic circuits; CMOS technology; Circuit faults; Fabrication; Fault tolerance; Logic design; Logic devices; Nanoscale devices; Robustness; Table lookup; Combinational logic fault tolerance; computer reliability; fault tolerance; logic design; nanotechnology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Application-specific Systems Architectures and Processors (ASAP), 2010 21st IEEE International Conference on
Conference_Location :
Rennes, France
ISSN :
2160-0511
Print_ISBN :
978-1-4244-6966-6
Electronic_ISBN :
2160-0511
Type :
conf
DOI :
10.1109/ASAP.2010.5540775
Filename :
5540775
Link To Document :
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