Title :
The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics
Author :
Dolny, G.M. ; Sapp, S. ; Elbanhaway, A. ; Wheatley, C.F.
Author_Institution :
Fairchild Semicond., Mountaintop, PA, USA
Abstract :
This paper presents a comprehensive study of the body diode characteristics of high-channel density trench power MOSFETs using analytic modeling, 2-dimensional numerical simulation, and physical measurements. The results show that, for state-of-the-art trench MOSFETs, the body diode characteristics are strongly influenced by majority carriers in the channel due to gate-controlled third quadrant conduction. This large channel current is shown to be the result of dynamic threshold voltage lowering due to the MOSFET body effect.
Keywords :
power MOSFET; semiconductor device models; 2D numerical simulation; MOSFET body effect; analytic modeling; channel current; channel majority carriers; dynamic threshold voltage lowering; gate-controlled third quadrant conduction; high-channel density power MOSFET; threshold voltage reduction; trench MOSFET body diode characteristics; Power MOSFETs; Semiconductor device modeling;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332904
