Title :
Effect of electron and helium irradiation on the high current density IV behaviour of Si power diodes-modelling and experiment
Author :
Bakowski, Mietek
Author_Institution :
Dept. of Electron., KTH, R. Inst. of Technol., Kista, Sweden
Abstract :
The complex behaviour of the dynamic IV characteristics of electron and helium irradiated fast Si diodes, under surge current conditions, have been modelled successfully using an experimentally based model of the temperature dependence of trapping parameters of dominant recombination centers. A special care has been taken to determine the thermal boundary conditions at the contacts. The correctness of the thermal boundary conditions and of the model have been verified, comparing the measured failure limit (SOA) of the diodes irradiated with varying electron dose and combination of electrons and helium with the predicted SOA using the model of thermal instability, based on the thermal generation of the intrinsic carriers due to the self-heating.
Keywords :
current density; electron-hole recombination; elemental semiconductors; helium; power semiconductor diodes; radiation effects; semiconductor device measurement; semiconductor device models; silicon; thermal stability; He; SOA; Si; contact thermal boundary conditions; diode measured failure limit; dominant recombination centers; electron dose; electron irradiation; helium irradiation; high current density IV behaviour; intrinsic carrier thermal generation; power diodes; self-heating; surge current conditions; thermal instability; trapping parameters temperature dependence; Charge carrier lifetime; Current density; Helium; Power semiconductor diodes; Radiation effects; Semiconductor device modeling; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332913
