Title :
Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with ZrLaOx as gate dielectric
Author :
Chuan-Yu Han ; Lai, P.T. ; Leung, C.H. ; Che, C.M.
Author_Institution :
Dept. of Electr. & Electron., Univ. of Hong Kong, Hong Kong, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Pentacene organic thin-film transistor (OTFT) based on ZrLaOx gate dielectric is proposed and has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. It reveals that the plasma treatment can greatly improve carrier mobility and shift the threshold voltage in the positive direction. With a threshold voltage less than 0.5 V, the OTFT can work at very low supply voltage. On the other hand, the ensuing ammonia annealing counteracts the plasma treatment and shifts the threshold voltage in the opposite direction.
Keywords :
ammonia; annealing; carrier mobility; dielectric devices; fluorine; lanthanum compounds; organic semiconductors; plasma materials processing; thin film transistors; zirconium compounds; OTFT; ZrLaOx; ammonia annealing; carrier mobility; fluorine plasma; gate dielectric; pentacene organic thin-film transistor; plasma treatment; supply voltage; threshold voltage; Annealing; Dielectrics; Logic gates; Organic thin film transistors; Plasmas; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467743
