Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with ZrLaOx as gate dielectric

Author

Chuan-Yu Han ; Lai, P.T. ; Leung, C.H. ; Che, C.M.

Author_Institution

Dept. of Electr. & Electron., Univ. of Hong Kong, Hong Kong, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

Pentacene organic thin-film transistor (OTFT) based on ZrLaO_x gate dielectric is proposed and has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. It reveals that the plasma treatment can greatly improve carrier mobility and shift the threshold voltage in the positive direction. With a threshold voltage less than 0.5 V, the OTFT can work at very low supply voltage. On the other hand, the ensuing ammonia annealing counteracts the plasma treatment and shifts the threshold voltage in the opposite direction.

Keywords

ammonia; annealing; carrier mobility; dielectric devices; fluorine; lanthanum compounds; organic semiconductors; plasma materials processing; thin film transistors; zirconium compounds; OTFT; ZrLaO_x; ammonia annealing; carrier mobility; fluorine plasma; gate dielectric; pentacene organic thin-film transistor; plasma treatment; supply voltage; threshold voltage; Annealing; Dielectrics; Logic gates; Organic thin film transistors; Plasmas; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467743

Filename

6467743