A simple method to accurately determine the temperature dependence of thermal resistance of InP HBTs

Author

Jun Liu ; Wei Cheng ; Lin Zhang ; Haiyan Lu ; Chunlin Han

Author_Institution

Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors (HBTs) on ambient and junction temperatures is presented. A nonlinear model of the thermal resistance dependence on the power dissipation is introduced for the actual junction temperature predicting. This method is demonstrated by an accurate extraction of thermal effects of a power HBT with an effective emitter area of 1×15μm², fabricated with an in-house InP HBT technology.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; power transistors; thermal resistance; HBT; heterojunction bipolar transistors; junction temperature; nonlinear dependence; nonlinear model; power dissipation; temperature dependence; thermal effects; thermal resistance; Heterojunction bipolar transistors; Junctions; Power dissipation; Temperature dependence; Temperature measurement; Thermal resistance; Heterojunction Bipolar Transistor; extraction; model; thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467760

Filename

6467760