Title :
Correlation between gate oxide reliability and the profile of the trench top corner in Shallow Trench Isolation (STI)
Author :
Tai-Su Park ; Yu Gyun Shin ; Han Sin Lee ; Moon Han Park ; Sang Dong Kwon ; Ho Kyu Kang ; Young Bum Koh ; Moon Yong Lee
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
In order to develop a Shallow Trench Isolation (STI) which does not have trench corner induced degradation of the gate oxide, its integrities were evaluated with rounded, non-rounded top corner, and an addition of CVD SiO/sub 2/ spacer. In the experiment, we found that the rounded and SiO/sub 2/ spacered STI showed the best result meaning no harmful influence of the corner to the gate oxide integrity. Also, etch-back processes of the filled CVD SiO/sub 2/ were modified to eliminate the degradation of the gate oxide by a stress concentration at top corner kinks.
Keywords :
MOSFET; etching; isolation technology; oxidation; semiconductor device reliability; stress analysis; CVD SiO/sub 2/ spacer; NMOS transistor; Si-SiO/sub 2/-SiN; charge to breakdown; chemical mechanical polishing planarization; etch-back processes; gate oxide integrity; gate oxide reliability; nonrounded top corner; rounded top corner; shallow trench isolation; stress concentration; stress simulation; top corner kinks; trench top corner profile; Chemical vapor deposition; Degradation; Etching; Filling; Hafnium; Moon; Planarization; Research and development; Silicon compounds; Stress;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554088
