A monolithic multi-finger nanodiamond lateral vacuum microtriode

Author

Ghosh, Nirnay ; Kang, W.P. ; Hsu, S.H. ; Raina, S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

2013

fDate

8-12 July 2013

Firstpage

1

Lastpage

2

Abstract

This article reports a vacuum multi-finger monolithic microtriode utilizing nanodiamond as the emitting material. The structure is comprised of 140-fingerlike nanodiamond emitters with built-in nanodiamond gate and Si anode. A mixed lithography patterning approach is used to fabricate the three-terminal device structure. Triode characteristics, demonstrating gate controlled emission current modulation at low operating gate and anode voltages, are obtained. The realization of the efficient monolithic microtriode allows further development of robust vacuum integrated circuit for application in high temperature and radiation harsh environments.

Keywords

diamond; elemental semiconductors; lithography; monolithic integrated circuits; nanoelectronics; radiation hardening (electronics); silicon; triodes; vacuum microelectronics; Si; anode voltage; emitting material; fingerlike nanodiamond emitters; gate controlled emission current modulation; gate voltage; mixed lithography patterning approach; monolithic microtriode; monolithic multifinger nanodiamond lateral vacuum microtriode; nanodiamond gate; radiation harsh environments; three-terminal device structure; triode characteristics; vacuum integrated circuit; Anodes; Field emission; Microtriode; Nanodiamond; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2013 26th International

Conference_Location

Roanoke, VA

Type

conf

DOI

10.1109/IVNC.2013.6624729

Filename

6624729