DocumentCode :
3419185
Title :
Tunable linear MOS resistor for RF applications
Author :
Xiang, Xinbo ; Sturm, Johannes
Author_Institution :
Sch. of Syst. Eng., Carinthia Univ. of Appl. Sci., Villach, Austria
fYear :
2012
fDate :
16-18 Jan. 2012
Firstpage :
37
Lastpage :
40
Abstract :
This paper discusses a continuously tunable linear MOS resistor with bi-directional characteristics. The proposal is based on a 2nd order nonlinearity cancellation and is implemented by quasi-floating-gate (QFG) technique. The resistor is optimized for speed, noise and linearity, which makes it well-suited for tunable RF amplifiers. Parallel slices were introduced to enlarge the tuning range. A switching strategy is implemented to guarantee monotonic tuning with limited linearity loss. A testchip is fabricated in 65nm CMOS technology, which shows a -40dB distortion with moderate overdrive voltage and 200mV peak to peak signal amplitude and a high tuning ratio of 19. This MOS resistor has no static power consumption and a layout area of 39μm × 37μm.
Keywords :
CMOS integrated circuits; circuit tuning; radiofrequency amplifiers; resistors; CMOS technology; RF applications; bi-directional characteristics; continuously tunable linear MOS resistor; monotonic tuning; parallel slices; quasifloating-gate; second order nonlinearity cancellation; size 65 nm; switching strategy; tunable RF amplifiers; Linearity; Logic gates; Noise; Resistance; Resistors; Transistors; Tuning; MOS resistor; linear resistors; monotonicity; quasi-floating-gate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
Type :
conf
DOI :
10.1109/SiRF.2012.6160119
Filename :
6160119
Link To Document :
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