Title :
A 245 GHz CB LNA and SHM mixer in SiGe technology
Author :
Mao, Yanfei ; Schmalz, K. ; Borngräber, J. ; Scheytt, J.C.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
The paper presents a four stage 245 GHz LNA in an ft/fmax=280/425 GHz SiGe technology and a 4th sub harmonic 245 GHz transconductance mixer in an ft/fmax=250/300 GHz SiGe technology. The LNA takes advantage of common base (CB) topology for each stage and has 12 dB gain at 245 GHz, while exhibiting a 3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation of 28 mW. The transconductance mixer has -7 dB conversion gain at 245 GHz with an LO power of 8 dBm at 61 GHz. The mixer draws 9.8 mA at 3V. Simulation results of the receiver comprising the CB LNA and SHM mixer are given.
Keywords :
Ge-Si alloys; low noise amplifiers; microwave amplifiers; microwave mixers; millimetre wave amplifiers; millimetre wave mixers; network topology; submillimetre wave amplifiers; submillimetre wave mixers; 4th SHM transconductance mixer; 4th subharmonic transconductance mixer; CB LNA; LO power; SiGe; bandwidth 26 GHz; common base low noise amplifier; conversion gain; current 9.8 mA; frequency 245 GHz; frequency 250 GHz to 300 GHz; frequency 280 GHz to 425 GHz; frequency 61 GHz; gain -7 dB; gain 12 dB; gain 3 dB; power 28 mW; power dissipation; supply voltage; voltage 2 V; voltage 3 V; Frequency measurement; Gain; Harmonic analysis; Mixers; Noise figure; Silicon germanium; Transconductance; LNA; SiGe; mm-wave; sub harmonic mixer;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160120
