Title :
Scaleable non linear low frequency noise model of SiGe HBT
Author :
Rennane, A. ; Bary, L. ; Niu, G. ; Cressler, J.D. ; Joseph, J. ; Graffeuil, J. ; Plana, R.
Author_Institution :
LAAS, Univ. Paul Sabatier, Toulouse, France
Abstract :
This paper presents the low frequency noise behavior of advanced SiGe HBT´s. It is investigated the influence of the Ge rate on the low frequency noise properties. We propose a scaleable non linear model that is compatible with commercial CAD platform.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; SiGe; SiGe HBT; low-frequency noise; scaleable nonlinear model; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microelectronics; Noise figure; Noise generators; Noise measurement; Radio frequency; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196702
