Potential and capabilities of two-terminal devices as millimeter- and submillimeter-wave fundamental sources

Author

Eisele, H. ; Haddad, G.I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

3

fYear

1999

fDate

13-19 June 1999

Firstpage

933

Abstract

InP Gunn devices and GaAs TUNNETT diodes yielded RF power levels of, for example, >80 mW at 152 GHz, >10 mW at 202 GHz, and >1 mW at 315 GHz. They are among the most promising candidates for all-solid-state and low-noise RF power generation at high millimeter-wave and submillimeter-wave frequencies. These recent experimental results are compared with performance predictions, and the capabilities of other potential solid-state fundamental sources for this frequency range such as, IMPATT diodes and RTD´s are discussed.

Keywords

Gunn devices; IMPATT diodes; millimetre wave diodes; millimetre wave generation; resonant tunnelling diodes; submillimetre wave diodes; submillimetre wave generation; transit time devices; tunnel diodes; 1 to 80 mW; 152 to 315 GHz; GaAs; GaAs TUNNETT diode; IMPATT diode; InP; InP Gunn device; RF power generation; RTD; all-solid-state device; millimeter-wave source; submillimeter-wave source; two-terminal device; Computer science; Gallium arsenide; Gunn devices; Indium phosphide; Laboratories; Power generation; Radio frequency; Resonant tunneling devices; Schottky diodes; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779539

Filename

779539