A high power broadband monolithic power amplifier for Ka-band ground terminals

Author

Siddiqui, M.K. ; Sharma, A.K. ; Callejo, L.G. ; Lai, R.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

Volume

3

fYear

1999

fDate

13-19 June 1999

Firstpage

951

Abstract

A high power broadband monolithic power amplifier operating from 29 to 32 GHz is presented for Ka-band ground terminal applications. Using 0.15 /spl mu/m InGaAs/AlGaAs/GaAs pseudomorphic HEMT (PHEMT) devices, the two stage power amplifier on 4 mil GaAs substrate demonstrated greater than 16 dB small signal gain and 32 dBm (1.6 watts) power. The amplifier attained peak output power of 33 dBm (2 watts) and power added-efficiency of 27%. At this power level, the amplifier exhibited power densities in excess of 620 mW/mm. Performance capabilities of the HEMT power amplifiers at millimeter-wave frequencies is documented in terms of power densities at 1 dB compression and at saturation, as well as power-added efficiency.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; millimetre wave power amplifiers; satellite ground stations; wideband amplifiers; 0.15 micron; 1.6 to 2 W; 27 percent; 29 to 32 GHz; 4 mil; InGaAs-AlGaAs-GaAs; Ka-band; broadband monolithic power amplifier; ground terminals; millimeter-wave frequencies; peak output power; power added-efficiency; power densities; power-added efficiency; pseudomorphic HEMT; small signal gain; two stage power amplifier; Broadband amplifiers; Frequency; Gain; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779543

Filename

779543