Effect of arsenic and phosphorus doping on polysilicon resistor noise and TCR

Author

Kim, Joo-Hyung ; Kim, Jung-Joo ; Lee, Kyu-Ok ; Lee, Chang-Eun ; Lee, Jong-Ho ; Kim, Dong-Seok ; Kim, Nam-Joo ; Yoo, Kwang-Dong

Author_Institution

Dongbu HiTek, Bucheon, South Korea

fYear

2012

fDate

16-18 Jan. 2012

Firstpage

121

Lastpage

124

Abstract

Flicker (1/f) noise and TCR are compared for arsenic- and phosphorus-doped polysilicon in a 0.18 μm CMOS base technology. Resistors implanted with arsenic exhibit about 4 times higher noise than with phosphorus at the same dose and thermal budget. The TCR of arsenic-doped polysilicon is negative, near -1065 ppm/K, while that of phosphorus-doped resistors positive, about + 590 ppm/K. The mismatch of N-channel MOSFETs with arsenic-doped gates is about 40% lower than with phosphorus gates. The results are attributed to the difference in grain-size and dopant segregation. The difference in grain size is confirmed by TEM and SEM micrographs.

Keywords

1/f noise; CMOS integrated circuits; arsenic; flicker noise; grain size; integrated circuit noise; phosphorus; resistors; scanning electron microscopy; semiconductor doping; transmission electron microscopy; N-channel MOSFET; TCR; arsenic-doped polysilicon phosphorus doping; dopant segregation; flicker noise; grain size; phosphorus gates; polysilicon resistor noise; scanning electron microscopy; size 0.18 mum; temperature coefficient of resistance; thermal budget; transmission electron microscopy; Logic gates; MOSFETs; Noise; Resistance; Resistors; Silicon; 1/f noise; TCR; mismatch; polysilicon resistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1317-0

Type

conf

DOI

10.1109/SiRF.2012.6160161

Filename

6160161