Study of electron mobility on silicon with different crystalline orientations

Author

Wei Jiang ; Haizhou Yin ; Yalou Zhang ; Yunfei Liu ; Weize Yu ; Jing Xu ; Huilong Zhu

Author_Institution

Inst. of Microelectron., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

nMOSFETs with different channel directions are fabricated on (100), (110), (111) and (112) silicon substrates, in order to study electron mobility on (112) substrates. Electron mobility is extracted and compared between different crystalline orientations. Results show that electron mobility on (112) substrates is higher than that on (110) substrates but lower than that on (100) substrates. Electron mobility on (112) substrates is channel orientation depended, which is different from that on (111) substrates. Electron mobility on (112) substrates is close to that on (111) substrates with current flow along <;110> direction, and is close to that on (110) substrates with current flow along <;111> direction.

Keywords

MOSFET; electron mobility; elemental semiconductors; silicon; Si; channel directions; channel orientation; crystalline orientations; current flow; electron mobility; nMOSFET; Current measurement; Electron mobility; Logic gates; MOSFETs; Silicon; Stress; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467830

Filename

6467830