DocumentCode
342019
Title
Applications of Si/SiGe technology for high-speed communications systems
Author
Larson, L.E. ; Delaney, M.J.
Author_Institution
Center for Wireless Commun., California Univ., San Diego, La Jolla, CA, USA
Volume
3
fYear
1999
fDate
13-19 June 1999
Firstpage
1077
Abstract
This paper will summarize recent developments in the field of Si/SiGe HBT technology for high-speed communications applications. This technology promises to provide "III-V-like" performance in a silicon VLSI environment, and recent developments demonstrate that highly integrated mixed-signal devices can be implemented with outstanding performance and yield.
Keywords
elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; silicon compounds; Si-SiGe; Si/SiGe HBT technology; high-speed communication system; integrated mixed-signal device; CMOS technology; Communications technology; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Paper technology; Silicon germanium; Space technology; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779574
Filename
779574
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