Title :
Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency
Author :
Yu, Hongyu ; Pang, Wei ; Hao Zhang ; Kim, Eun Sok
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
fDate :
30 Jan.-3 Feb. 2005
Abstract :
This paper describes a temperature compensated film bulk acoustic resonator (FBAR) with temperature coefficient of resonant frequency (TCF) of -0.45 ppm/°C (between 85 and 110°C) at 4.4 GHz. The FBAR is composed of Al/ZnO/Al/SiO2 on a surface micromachined cantilever that is released by XeF2 vapor etching. Residual stress and material temperature parameters have been incorporated into simulations for optimal design of a temperature compensated FBAR.
Keywords :
acoustic resonators; aluminium; micromechanical resonators; silicon compounds; xenon compounds; zinc compounds; 4.4 GHz; 85 to 110 C; Al-ZnO-Al-SiO2; film bulk acoustic resonator; material temperature parameters; residual stress; resonant frequency; surface micromachined cantilever; ultra low temperature coefficient; vapor etching; Band pass filters; Capacitors; Ceramics; Film bulk acoustic resonators; Resonance; Resonant frequency; Resonator filters; Temperature sensors; Voltage-controlled oscillators; Zinc oxide;
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
Print_ISBN :
0-7803-8732-5
DOI :
10.1109/MEMSYS.2005.1453859
