Title :
Greater than 70% PAE enhancement-mode GaAs HJFET power amplifier MMIC with extremely low leakage current
Author :
Yoshida, S. ; Wakabayashi, Y. ; Kohno, M. ; Uemura, K.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Shiga, Japan
Abstract :
A fully enhancement-mode heterojunction FET (E-HJFET) with Vth of +0.25 V has been newly developed. The E-HJFET exhibited 79.6% power added efficiency (PAE) at 31.5 dBm output power level and 11.5 dB power gain (Gp) at 836 MHz. A two-stage power amplifier was developed using this E-HJFET. Under 3.5 V single supply voltage operation, the MMIC exhibited 71.9% PAE, 31.5 dBm output power with 24.5 dB power gain at 836 MHz. The total leakage current of the developed MMIC under zero gate voltage was as small as 5 /spl mu/A.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; field effect MMIC; gallium arsenide; leakage currents; 0.25 V; 11.5 dB; 24.5 dB; 3.5 V; 70 to 79.6 percent; 836 MHz; GaAs; HJFET power amplifier MMIC; enhancement-mode GaAs HJFET; heterojunction FET; low leakage current; power added efficiency; single supply voltage operation; two-stage power amplifier; Batteries; Costs; FETs; Gallium arsenide; Leakage current; Low voltage; MMICs; Power amplifiers; Power generation; Switches;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779598
