Title :
A reduced surface current LDMOS with stronger ESD robustness
Author :
Lingli Jiang ; Hang Fan ; Chuan He ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Film & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A novel reduced surface current LDMOS structure is proposed, whose current flow is analyzed by theoretical analysis and numerical simulation. Compared to conventional LDMOS, it can restrain the surface current crowding effect under ESD stress. The TLP measured results confirms that the novel structure shows no soft leakage phenomenon, and its current discharge ability is more than four times of the conventional one.
Keywords :
MOS integrated circuits; electrostatic discharge; numerical analysis; ESD robustness; TLP; current discharge ability; current flow; numerical simulation; soft leakage phenomenon; surface current LDMOS reduction; Abstracts; Logic gates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467851
