Title :
Inspection system for fine gate patterns of GaAs-FET
Author :
Sakamoto, Hasahiko ; Nakajima, Keiji ; Kosaka, Nobuyuki
Author_Institution :
Mitsubish Electric Corp., Hyogo, Japan
Abstract :
An automatic system for GaAs-FET fine pattern defects has been developed to replace the current unreliable visual inspection by human eyes. The system uses a laser scanning microscope and information on both line width and reflected light intensity is used for the inspecting. A high-speed image processor has been developed to achieve a high inspection speed of 15 s per chip. The accuracy and the repeatability of the line width measurement are ±0.09 μm and ±0.02 μm. These values are good enough to be accepted in a production line, and the developed system has been put to practical use
Keywords :
III-V semiconductors; automatic optical inspection; field effect transistors; gallium arsenide; image processing; semiconductor device testing; 15 s; FET; GaAs; accuracy; automatic optical inspection; fine gate patterns; image processor; laser scanning microscope; line width; production line; reflected light intensity; repeatability; semiconductor; Automatic optical inspection; FETs; Frequency; Gallium arsenide; High speed optical techniques; Laser beams; Manufacturing processes; Optical filters; Optical microscopy; Scanning electron microscopy;
Conference_Titel :
Industrial Electronics, Control, Instrumentation, and Automation, 1992. Power Electronics and Motion Control., Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0582-5
DOI :
10.1109/IECON.1992.254371
