Heterojunction bipolar transistor technology for defense and commercial applications

Author

Cowles, J. ; Oki, A. ; Streit, D.

Author_Institution

Div. of Electron. Syst. & Technol., TRW Inc., Redondo Beach, CA, USA

Volume

1

fYear

1997

fDate

11-14 Aug 1997

Firstpage

9

Abstract

GaAs heterojunction bipolar transistors (HBTs) have undergone a transition from defense applications to low cost, high volume commercial products for the portable wireless market. In particular, GaAs HBTs have traditionally targetted the front-end interface for RF transceivers, but their insertion has broadened to encompass demodulation, frequency conversion, digitization and clock-recovery functions. As GaAs HBTs establish their presence in the commercial arena, new device technologies are emerging offering better performance and innovative system and circuit options

Keywords

UHF bipolar transistors; UHF integrated circuits; bipolar MIMIC; bipolar MMIC; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; microwave bipolar transistors; millimetre wave bipolar transistors; AlGaAs-GaAs; GaAs; GaAs HBT technology; InP; InP HBT technology; RF transceivers; clock-recovery functions; commercial applications; defense applications; demodulation; frequency conversion; front-end interface; heterojunction bipolar transistors; portable wireless market; CMOS technology; FETs; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Phase noise; Radio frequency; Silicon; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International

Conference_Location

Natal

Print_ISBN

0-7803-4165-1

Type

conf

DOI

10.1109/SBMOMO.1997.646786

Filename

646786