Title :
An EMI suppression MOSFET driver
Author_Institution :
Semi-Tech. Design Inc., Seattle, WA, USA
Abstract :
The MOSFFTs dVdrain/dt during turn off is sensed by the EMI suppression driver circuit, which selectively adjust the Vgs transition time at a voltage near the MOSFFT´s threshold voltage. This technique controls the dVdrain/dt and reduces the EMI noise produced by a hard switching power MOSFET while keep its power loss at a minimum
Keywords :
driver circuits; electromagnetic interference; field effect transistor switches; interference suppression; losses; power MOSFET; EMI noise reduction; EMI suppression MOSFET driver; EMI suppression driver circuit; MOSFET turn off; MOSFFTs dVdrain/dt; Vgs transition time adjustment; hard switching power MOSFET; power loss minimisation; Circuit noise; Driver circuits; Electromagnetic interference; MOSFET circuits; Noise generators; Noise reduction; Power MOSFET; Power generation; Resistors; Threshold voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1997. APEC '97 Conference Proceedings 1997., Twelfth Annual
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3704-2
DOI :
10.1109/APEC.1997.581460
