Mixed material integration for power amplifier MMICs

Author

Matinpour, B. ; Bergman, J. ; Chun, C. ; Laskar, J. ; Jokerst, N.M.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

625

Abstract

In this paper we present the first large signal analysis of thin film HBTs by experimental load pull measurements. InP HBTs are fully characterized before and after substrate removal and integration onto electrically insulating substrates, and show preserved small and large signal performance. In addition, we demonstrate the feasibility of integrating thin film power devices and MMICs on thermally conductive substrates for development of high efficiency power amplifiers.

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit bonding; integrated circuit technology; microwave bipolar transistors; microwave power transistors; power bipolar transistors; power integrated circuits; thin film transistors; BeO; InP; InP HBTs; bonded HBTs; electrically insulating substrates; high efficiency power amplifiers; large signal analysis; load pull measurements; mixed material integration; power amplifier MMICs; thermally conductive substrates; thin film HBTs; thin film power devices; Conductive films; Dielectrics and electrical insulation; High power amplifiers; Indium phosphide; MMICs; Power amplifiers; Signal analysis; Substrates; Thermal conductivity; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779839

Filename

779839