Dopant redistribution during gate oxidation including transient enhanced diffusion in oxidizing ambient

Author

Uchida, T. ; Eikyu, K. ; Fujinaga, M. ; Teramoto, A. ; Miyoshi, H.

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

795

Lastpage

798

Abstract

Dopant redistribution during gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to oxidation occur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N/sub 2/-annealings. From the results, it is concluded that, for typical gate oxidation conditions (oxide thickness less than 100 /spl Aring/), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.

Keywords

VLSI; diffusion; doping profiles; ion implantation; oxidation; 100 angstrom; N/sub 2/; VLSI; damage-enhanced diffusion; dopant redistribution; gate oxidation; implantation damage; oxidation times; oxide thickness; oxidizing ambient; thermal process; transient enhanced diffusion; Annealing; Boron; Implants; Laboratories; Mass spectroscopy; Modems; Oxidation; Time measurement; Ultra large scale integration; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554099

Filename

554099