DocumentCode
3421177
Title
Bulk microswitch for power RF applications
Author
Muller, P.N. ; Rolland, N. ; Ziaei, A. ; Polizzi, J.-P. ; Collard, D. ; Buchaillot, L.
Author_Institution
Inst. d´´Electronique, de Microelectronique et de Nanotechnologie, CNRS, Villeneuve d´´Ascq, France
fYear
2005
fDate
30 Jan.-3 Feb. 2005
Firstpage
171
Lastpage
174
Abstract
This paper proposes a novel microswitch design for RF power applications as high as 10W in the 2MHz-2GHz frequency band. This device is an ohmic switch electrostatically actuated and fabricated in bulk silicon for heat dissipation purpose. Wafer level packaging solution is shown.
Keywords
microswitches; microwave switches; semiconductor device packaging; 0.002 to 2 GHz; bulk microswitch; bulk silicon; electrostatic actuation; heat dissipation; ohmic switch; power RF applications; wafer level packaging; Biomembranes; Coplanar waveguides; Electrodes; Etching; Microswitches; Power semiconductor switches; Radio frequency; Silicon; Voltage; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-8732-5
Type
conf
DOI
10.1109/MEMSYS.2005.1453894
Filename
1453894
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