Resistive FET mixer conversion loss and IMD optimization by selective drain bias

Author

Garcia, J.A. ; Pedro, J.C. ; De la Fuente, M.L. ; Carvalho, N.B. ; Mediavilla, A. ; Tazon, A.

Author_Institution

Dept Ingenieria de Comunicaciones, Cantabria Univ., Santander, Spain

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

803

Abstract

This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device´s channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of important minimum conversion loss bias, but also of in-band IMD sweet spots that were then used to optimize a FET resistive mixer performance.

Keywords

MESFET circuits; UHF mixers; circuit optimisation; intermodulation distortion; losses; microwave mixers; nonlinear network analysis; semiconductor device models; IMD optimization; Taylor series expansion coefficients; channel resistance nonlinearity; mixer conversion loss; nonlinear MESFET model extraction technique; resistive FET mixer; selective drain bias; Dynamic range; FETs; Intrusion detection; Linearity; MESFET circuits; Microwave circuits; Microwave devices; Microwave theory and techniques; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779881

Filename

779881