DocumentCode
3422258
Title
Porous silicon-a new material for MEMS
Author
Lehmann, V.
Author_Institution
Siemens AG, Munich, Germany
fYear
1996
fDate
11-15 Feb 1996
Firstpage
1
Lastpage
6
Abstract
A technique for the formation of pore arrays with high aspect ratios by electrochemical etching of n-type silicon wafers in hydrofluoric acid is presented. New devices such as a silicon based capacitor or photonic bandgap materials for the infrared regime are fabricated based on this new technology
Keywords
anodisation; capacitors; elemental semiconductors; etching; light emitting diodes; micromachining; micromechanical devices; photonic band gap; porous materials; silicon; I-V characteristic; MEMS material; Si; anodisation; capacitor; dot pattern; electrochemical etching; elemental semiconductor; high aspect ratios; infrared regime; macroporous; mesoporous; microporous; n-type wafers; photonic bandgap materials; pore arrays formation; porous silicon; Conductivity; Current density; Electrodes; Etching; Lighting; Mesoporous materials; Micromechanical devices; Silicon; Space charge; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-2985-6
Type
conf
DOI
10.1109/MEMSYS.1996.493820
Filename
493820
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