Title :
Device concepts using two-dimensional electronic materials: Graphene, MoS2, etc
Author :
Schwierz, Frank ; Pezoldt, Jorg
Author_Institution :
Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Recently graphene, a carbon-based 2D material, has attracted a lot of attention in the device community and many groups have successfully fabricated graphene MOSFETs with impressing performance. One should recognize, however, that graphene is not the only 2D material. In fact there is a variety of 2D materials beyond graphene that may be of interest for transistors as well. This paper provides an overview on the current status of graphene transistors and then introduces several other 2D materials such as dichalcogenides, silicene, and germanene. The status of these materials in regard to electronic applications, in particular transistors, is discussed.
Keywords :
MOSFET; carbon; molybdenum compounds; semiconductor materials; transistors; 2D material; C; MOSFET; MoS2; carbon-based 2D material; device community; dichalcogenide; germanene; graphene transistor; silicene; two-dimensional electronic materials; Graphene; MOSFETs; Radio frequency; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467941