Title :
Dielectric relaxation model in high-k materials: Simplified Kohlrausch-Williams-Watts function
Author :
Peng Fei Wang ; Chun Zhao ; Ce Zhou Zhao ; Gang Liu
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Liverpool, Liverpool, UK
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The dielectric relaxation in the high-k materials, which would cause the metal-oxide-semiconductor field-effect transistor deterioration, is able to be fitted by several models. A novel model is proposed to simplify the original Kohlrausch-Williams-Watts (KWW) model. The proposed model has an analytical expression respectively in both high and low frequency domain. A critical comparison is made between the simplified model and the original model. The simplified KWW model is able to describe the dielectric relaxation data of high-k materials to a high degree of accuracy.
Keywords :
MOSFET; dielectric relaxation; high-k dielectric thin films; semiconductor device models; Kohlrausch-Williams-Watts function; dielectric relaxation model; high-k material; low frequency domain; metal oxide semiconductor field effect transistor deterioration; Data models; Dielectrics; Equations; Frequency domain analysis; High K dielectric materials; Mathematical model;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467945
