Title :
The impact of high pressure dry O/sub 2/ oxidation on sub-quarter micron planarized LOCOS
Author :
Yamashita, T. ; Kuroi, T. ; Uchida, T. ; Komori, S. ; Kobayashi, K. ; Inuishi, M. ; Miyoshi, H.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Recessed LOCOS isolation using high pressure dry O/sub 2/ oxidation has been studied. The effect of the high pressure dry O/sub 2/ oxidation on the bird´s beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond while maintaining the process simplicity.
Keywords :
DRAM chips; VLSI; integrated circuit measurement; isolation technology; oxidation; 256 Mbit; DRAM; O/sub 2/; bird´s beak encroachment; gate oxide integrity; high pressure dry oxidation; isolation characteristics; junction characteristics; process simplicity; recessed LOCOS isolation; sub-quarter micron planarized LOCOS; Atmospheric modeling; Birds; Capacitors; Electric variables; Fingers; Laboratories; Oxidation; Random access memory; Semiconductor films; Silicon;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554105
