Title :
Class AB technique for high performance switched-current memory cells
Author :
Worapishet, Apisak ; Hughes, John B. ; Toumazou, Chris
Author_Institution :
Mahanakorn Univ. of Technol., Bangkok, Thailand
Abstract :
A new class AB zero-voltage switched-current memory cell is presented. The circuit is theoretically shown to provide a significant improvement over the conventional class A zero-voltage cell in terms of a figure-of-merit combining speed, signal-to-noise-ratio and power dissipation. It also exhibits a constant settling characteristic and signal-independent charge injection errors, even in single-ended structures, resulting in an inherently highly linear memory cell. The theoretical advantage of this cell is confirmed by simulation which demonstrates a six-fold improvement in the figure-of-merit
Keywords :
analogue storage; cellular arrays; switched current circuits; circuit speed; class AB technique; figure-of-merit; linear memory cell; power dissipation; settling characteristic; signal-independent charge injection errors; signal-to-noise-ratio; switched-current memory cells; Circuit noise; Circuit simulation; Educational institutions; Laboratories; Linearity; MOS devices; Power dissipation; Signal to noise ratio; Switching circuits; Transconductance;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780767