Title :
Current sensing schemes for use in BiCMOS integrated circuits
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
In integrated circuits it is often required to devise some scheme to measure or limit current in a power transistor. By using the properties of bipolar transistors several simple circuits can be manufactured that enable accurate sensing of transistor current without the usual bandwidth limitations
Keywords :
BiCMOS integrated circuits; current comparators; current limiters; power integrated circuits; Al; Al resistor; BiCMOS integrated circuits; current limiting; current sensing schemes; power IC; power transistor; transistor current sensing; Aluminum; BiCMOS integrated circuits; Coupling circuits; Manufacturing processes; Parasitic capacitance; Propagation delay; Rectifiers; Resistors; Temperature; Threshold voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493865
