Title :
Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology
Author :
Ming-Dou Ker ; Tain-Shun Wu
Author_Institution :
VLSI Design Dept., Comput. & Commun. Res. Labs., Hsinchu, Taiwan
Abstract :
A novel device structure to effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The KBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as compared to the traditional finger-type output buffer.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; integrated circuit layout; integrated circuit reliability; protection; CMOS output buffers; ESD reliability; KBM ESD robustness; MM ESD robustness; deep-submicron LV CMOS technology; layout area reduction; low-voltage CMOS technology; octagon-type output buffer; octagonal device structure; output transistors; thin oxide NMOS devices; thin oxide PMOS devices; CMOS process; CMOS technology; Communication industry; Computer industry; Diodes; Electrostatic discharge; Fingers; MOS devices; Robustness; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554122
