Title :
Improvement of narrow emitter bipolar transistor performance by in-situ highly doped arsenic polysilicon technique
Author :
Inou, K. ; Katsumata, Y. ; Matsuda, S. ; Naruse, H. ; Sugaya, H. ; Iwai, Hisato
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
An in-situ highly doped arsenic polysilicon emitter technology has been developed as a way to improve the degradation of electrical characteristics suffered by narrow emitter bipolar transistors due to the plug effect. We have experimentally confirmed that transistors fabricated with the new technique have good electrical characteristics
Keywords :
arsenic; bipolar transistors; elemental semiconductors; heavily doped semiconductors; semiconductor doping; silicon; Si:As; degradation; electrical characteristics; fabrication; in-situ highly doped arsenic polysilicon; narrow emitter bipolar transistor; plug effect; Bipolar transistors; Boron; Epitaxial layers; Merging; Plugs; Rapid thermal annealing; Temperature;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493874
