DocumentCode
3428811
Title
Comparative study of various release methods for polysilicon surface micromachining
Author
Kim, Chang-Jin ; Chang-Jin Kim
Author_Institution
Dept. of Mech. & Aerosp. Eng., California Univ., Los Angeles, CA, USA
fYear
1997
fDate
26-30 Jan 1997
Firstpage
442
Lastpage
447
Abstract
This paper presents an objective comparison of various release techniques for polysilicon surface micromachining using identical test structures made by MCNC Multi-User MEMS Processes (MUMPs). Test structures of varying width and length were prepared using five different releasing procedures-evaporation drying with deionized water and methanol as final rinsing liquids, sublimation drying using p-dichlorobenzene and t-butyl alcohol, and CO2 supercritical drying. Both sublimation drying methods as well as supercritical drying rendered good results with 2 μm thick, 2 μm gap polysilicon cantilevers up to 700 μm in length. In addition, the systematic test in this study reveals, for the first time, that the maximum beam length obtainable increases as the beam width increases for the case of sublimation, opposite to the well known case of evaporation drying. In the course, we also introduce a new setup that considerably improves the way sublimation is used for releasing
Keywords
drying; elemental semiconductors; evaporation; micromachining; micromechanical devices; semiconductor device testing; silicon; 2 micron; 700 micron; CO2; MCNC multi-user MEMS processes; Si; evaporation drying; maximum beam length; polysilicon cantilevers; release methods; sublimation drying; supercritical drying; surface micromachining; test structures; Aerospace engineering; Aerospace testing; Liquids; Methanol; Micromachining; Micromechanical devices; Microstructure; Rough surfaces; Surface roughness; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location
Nagoya
ISSN
1084-6999
Print_ISBN
0-7803-3744-1
Type
conf
DOI
10.1109/MEMSYS.1997.581886
Filename
581886
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