• DocumentCode
    3428811
  • Title

    Comparative study of various release methods for polysilicon surface micromachining

  • Author

    Kim, Chang-Jin ; Chang-Jin Kim

  • Author_Institution
    Dept. of Mech. & Aerosp. Eng., California Univ., Los Angeles, CA, USA
  • fYear
    1997
  • fDate
    26-30 Jan 1997
  • Firstpage
    442
  • Lastpage
    447
  • Abstract
    This paper presents an objective comparison of various release techniques for polysilicon surface micromachining using identical test structures made by MCNC Multi-User MEMS Processes (MUMPs). Test structures of varying width and length were prepared using five different releasing procedures-evaporation drying with deionized water and methanol as final rinsing liquids, sublimation drying using p-dichlorobenzene and t-butyl alcohol, and CO2 supercritical drying. Both sublimation drying methods as well as supercritical drying rendered good results with 2 μm thick, 2 μm gap polysilicon cantilevers up to 700 μm in length. In addition, the systematic test in this study reveals, for the first time, that the maximum beam length obtainable increases as the beam width increases for the case of sublimation, opposite to the well known case of evaporation drying. In the course, we also introduce a new setup that considerably improves the way sublimation is used for releasing
  • Keywords
    drying; elemental semiconductors; evaporation; micromachining; micromechanical devices; semiconductor device testing; silicon; 2 micron; 700 micron; CO2; MCNC multi-user MEMS processes; Si; evaporation drying; maximum beam length; polysilicon cantilevers; release methods; sublimation drying; supercritical drying; surface micromachining; test structures; Aerospace engineering; Aerospace testing; Liquids; Methanol; Micromachining; Micromechanical devices; Microstructure; Rough surfaces; Surface roughness; System testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
  • Conference_Location
    Nagoya
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-3744-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1997.581886
  • Filename
    581886