DocumentCode
3429464
Title
Novel high aspect ratio aluminum plug for logic/DRAM LSIs using polysilicon-aluminum substitute (PAS)
Author
Horie, H. ; Imai, M. ; Itoh, A. ; Arimoto, Y.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
946
Lastpage
948
Abstract
This paper describes a polysilicon-aluminum substitute (PAS) technique for single-crystalline aluminum plugs with aspect ratios of over 7 used for subquartermicron logic/DRAM LSIs. A via hole was filled with polysilicon by CVD, and aluminum was deposited on the planarized polysilicon plug. An aluminum plug was substituted for the polysilicon by annealing. We filled via holes having a minimum diameter of 0.175 /spl mu/m and a depth of 1.7 /spl mu/mn (an aspect ratio of about 10) with aluminum.
Keywords
DRAM chips; aluminium; integrated circuit metallisation; integrated logic circuits; large scale integration; Si-Al; annealing; aspect ratio; logic/DRAM LSI; planarized polysilicon plug; polysilicon-aluminum substitute; single-crystalline aluminum plug; via hole; Acceleration; Aluminum; Annealing; Artificial intelligence; Large scale integration; Logic; Nitrogen; Optical wavelength conversion; Plugs; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554138
Filename
554138
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