DocumentCode :
3430568
Title :
Analyzing bridging faults impact on EEPROM cell array
Author :
Portal, J.M. ; Pérez, A.
Author_Institution :
ICF/L2MP-UMR CNRS 6137
fYear :
2001
fDate :
May 29 2001-June 1 2001
Firstpage :
3
Lastpage :
8
Abstract :
The objective of this paper is to present a specific EEPROM functional fault model related to the impact of bridging faults in the array of cells. Moreover, the evolution of these functional faults throughout the useful life of the memory is established. In this aim, a hierarchical overview from the array structure down to the floating gate transistor simulation model is given. A set of bridging faults is defined with their corresponding stimuli. Finally, a representative simulation example is detailed.
Keywords :
Built-in self-test; Charge transfer; Circuit faults; Degradation; EPROM; Nonvolatile memory; Random access memory; Read-write memory; Testing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Workshop, 2001. IEEE European
Conference_Location :
Stockholm, Sweden
ISSN :
1530-1877
Print_ISBN :
0-7695-1017-5
Type :
conf
DOI :
10.1109/ETW.2001.946653
Filename :
946653
Link To Document :
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