• DocumentCode
    343159
  • Title

    Discharging and recharging of anomalous positive charges in MOSFETs

  • Author

    Wu, Yongjun ; Xu, Minwen ; Tan, Changhua ; Wei, Jianlin ; Liang, Yi ; Wang, Yangyuan

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    301
  • Lastpage
    303
  • Abstract
    The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias
  • Keywords
    MOSFET; electric breakdown; semiconductor device reliability; MOSFET; anomalous positive charges; discharging; recharging; recharging bias; Character generation; Current measurement; Degradation; Electrons; MOSFETs; Microelectronics; Stress measurement; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785880
  • Filename
    785880