DocumentCode
343159
Title
Discharging and recharging of anomalous positive charges in MOSFETs
Author
Wu, Yongjun ; Xu, Minwen ; Tan, Changhua ; Wei, Jianlin ; Liang, Yi ; Wang, Yangyuan
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
1998
fDate
1998
Firstpage
301
Lastpage
303
Abstract
The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias
Keywords
MOSFET; electric breakdown; semiconductor device reliability; MOSFET; anomalous positive charges; discharging; recharging; recharging bias; Character generation; Current measurement; Degradation; Electrons; MOSFETs; Microelectronics; Stress measurement; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785880
Filename
785880
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