DocumentCode
343168
Title
Evidence of failure at high temperatures by metal penetration in Al 0.3Ga0.22In0.48P/GaAs HBTs
Author
Shu, W.M. ; Gu, W.D. ; Wu, J. ; Xia, G.Q. ; Houston, P.A.
Author_Institution
Inst. of Metall., Acad. Sinica, Shanghai, China
fYear
1998
fDate
1998
Firstpage
605
Lastpage
607
Abstract
AlxGa0.52-xIn0.48P/GaAs HBTs have both high gain and excellent temperature stability due to the large valence bandgap. In this paper, the transfer characteristics of an Al 0.3Ga0.22In0.48P/GaAs HBT device are measured at 673 K to show good performance at the beginning but degrade rapidly until it fails unrecoverably. Measurements of the emitter-base diode and base-collector diode characteristics show that the collector junction fails prior to the emitter junction. The reason lies in the metal penetration of the base ohmic contact through the thin base, which is proved by the secondary ion mass spectroscopy
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high-temperature electronics; indium compounds; ohmic contacts; secondary ion mass spectra; 673 K; Al0.3Ga0.22In0.48P-GaAs; Al0.3Ga0.22In0.48P/GaAs HBT; gain; high temperature failure; metal penetration; ohmic contact; secondary ion mass spectroscopy; temperature stability; transfer characteristics; valence bandgap; Artificial intelligence; Doping; Epitaxial growth; Gallium arsenide; Gold; Heterojunction bipolar transistors; Ohmic contacts; Semiconductor diodes; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785961
Filename
785961
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