DocumentCode :
3431789
Title :
Cost reduction and yield improvement by removing postash polymer residue from BEOL structures using inorganic chemicals
Author :
Haigermoser, C. ; Henry, Sally-Ann
Author_Institution :
SEZ, Xinzhu, Taiwan
fYear :
2002
fDate :
10-11 Dec. 2002
Firstpage :
149
Lastpage :
152
Abstract :
As finer architectures and higher aspect ratios result in the introduction of new materials, IC manufacturing processes must change to meet unprecedented higher requirements without adding cost and affecting throughput. This represents an enormous challenge to equipment design and chemical formulation development alike. Moreover, the transition to 300 mm wafer technology demands adaptation of 200-mm applications or even completely new process design. In the case of post-ash polymer removal in BEOL processing, a cost-effective approach applying novel inorganic mixtures on SEZ single-wafer tools has been found that enables shorter process times whilst ensuring wafer-to-wafer repeatability, low particle levels and even higher yields.
Keywords :
cost reduction; inorganic polymers; integrated circuit manufacture; surface cleaning; wafer bonding; 300 mm; BOEL structure; IC manufacturing; back-end-of-line structure; chemical formulation; cost reduction; inorganic chemicals; postash polymer residue removal; single-wafer tools; wafer technology; Costs; Digital signal processing; Electronics industry; Hafnium; Inorganic chemicals; Manufacturing processes; Polymers; Process design; Production; Semiconductor device manufacture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Technology Workshop, 2002
Print_ISBN :
0-7803-7604-8
Type :
conf
DOI :
10.1109/SMTW.2002.1197396
Filename :
1197396
Link To Document :
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