• DocumentCode
    343200
  • Title

    SOI wafer achieved by smart-cut process

  • Author

    Yingxue, Li ; Zhikuan, Zhang ; Weihua, Ni ; Xing, Zhang ; Yangyuan, Wang

  • Author_Institution
    Inst. of Microelectron., Beijing Univ., China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    761
  • Lastpage
    764
  • Abstract
    The smart-cut process is an alternative route to the former silicon on insulator (SOI) material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch back SOI). It is based on proton implantation and wafer bonding associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. In this paper, basic mechanisms of bonding and the splitting are discussed. Finally the characteristics of the final structure are presented
  • Keywords
    ion implantation; proton effects; silicon-on-insulator; wafer bonding; SOI wafer; Si-SiO2; in-depth splitting; proton implantation; smart-cut process; temperature treatment; wafer bonding; Annealing; Chemicals; Delamination; Hydrogen; Rough surfaces; Silicon; Surface roughness; Surface treatment; Temperature distribution; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.786123
  • Filename
    786123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=343200