Simulation of the high frequency performances of a new type of SiGe HBT and fabrication

Author

Zhao, Lixin ; Shen, Guangdi ; Chen, Jianxin ; Gao, Guo ; Zou, Deshu ; Xu, Chen ; Du, Jinyu

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

fYear

1998

fDate

1998

Firstpage

772

Lastpage

775

Abstract

In this paper, a new type of SiGe HBT with modulation doped quantum well base structures has been presented for the first time. It is of both higher cut off frequency f_T and maximum oscillation frequency f_max than the current SiGe HBTs. Its high frequency performances have been analyzed and simulated from the physical model, including the influence of the following factors. They are (1) the carrier transport in the undoped quantum well, (2) the parasitic parameters of quantum well and barrier and (3) the carrier transport time from the emitter to collector, as the base width is several hundred angstroms. The results of simulation are in good agreement with those of experimental tests

Keywords

Ge-Si alloys; carrier mobility; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; semiconductor quantum wells; HBT; SiGe; cut off frequency; emitter-collector transit time; high frequency performance; maximum oscillation frequency; modulation doped quantum well; parasitic parameters; Bipolar transistors; Doping; Epitaxial layers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Optical device fabrication; Sheet materials; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.786134

Filename

786134