DocumentCode :
3432267
Title :
Broadband SiGe HBT Amplifier Concepts for 40 Gbit/s Fibre-Optic Communication Systems
Author :
Schick, C. ; Feger, T. ; Sönmez, E. ; Schad, K.-B. ; Trasser, A. ; Schumacher, H.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ.
Volume :
1
fYear :
2005
fDate :
4-6 Oct. 2005
Firstpage :
113
Lastpage :
116
Abstract :
Distributed single-ended, distributed differential and lumped differential circuit concepts for realisation of linear broadband amplifiers are presented. Concept advantages and disadvantages are discussed. Demonstration circuits of the first two kinds have been fabricated, the third one being currently in fabrication. All three circuits utilise the same SiGe HBT technology. The amplifiers´ 3dB cut-off frequencies range from 32 GHz to 41 GHz. They are intended for use in 40 Gbit/s optical communication systems
Keywords :
Ge-Si alloys; bipolar transistor circuits; differential amplifiers; distributed amplifiers; lumped parameter networks; optical fibre communication; wideband amplifiers; 32 to 41 GHz; 40 Gbit/s; SiGe; broadband HBT amplifier; distributed differential circuit; distributed single-ended differential circuit; fibre-optic communication systems; linear broadband amplifiers; lumped differential circuit; Broadband amplifiers; Circuits; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Optical device fabrication; Optical fiber amplifiers; Optical fiber communication; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2005 European
Conference_Location :
Paris
Print_ISBN :
2-9600551-2-8
Type :
conf
DOI :
10.1109/EUMC.2005.1608806
Filename :
1608806
Link To Document :
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