Title :
An Improved Parasitic Resistance Model of Nano-Scale MOSFET
Author :
Hao Xu-Chun ; Dai Yue-Hua ; Chen Jun-ning ; Ke Dao-Ming ; Sun Jia-E
Author_Institution :
Dept. of Electron. Sci. & Technol., Anhui Univ., Hefei
Abstract :
The reason that existing models have underestimated the parasitic resistance of nano-scale MOSFET biased at low gate voltage was discussed. Then an improved resistance model was proposed. Finally, the influences of several technical parameters on the parasitic resistance were analyzed through numerical simulation, and some directions and measures might be taken to reduce the parasitic resistance.
Keywords :
MOSFET; electric resistance; nanotechnology; semiconductor device models; low gate voltage; nanoscale MOSFET; parasitic resistance model; Electric resistance; Electrical resistance measurement; Electronic mail; Electronics industry; Low voltage; MOS devices; MOSFET circuits; Numerical simulation; Parasitic capacitance; Sun;
Conference_Titel :
Wireless Communications, Networking and Mobile Computing, 2008. WiCOM '08. 4th International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-4244-2107-7
Electronic_ISBN :
978-1-4244-2108-4
DOI :
10.1109/WiCom.2008.428
